The MJE is designed for high−voltage, high−speed power switching inductive circuits where fall time is critical. They are particularly suited for and . MJE HIGH VOLTAGE FAST-SWITCHING. NPN POWER TRANSISTOR s. STMicroelectronics PREFERRED. SALESTYPE s. HIGH VOLTAGE CAPABILITY. Bipolar (BJT) Transistor NPN V 12A 4MHz 2W Through Hole TOAB.
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MJE13009 NPN Power Transistor
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MJE13009 Bipolar Transistor
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MJE 12 A, V NPN Bipolar Power Transistor
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